16
RF Device Data
Freescale Semiconductor
MRFE6S8046NR1 MRFE6S8046GNR1
PRODUCT DOCUMENTATION
Refer to the following documents, tools and software to aid your design process.
Application Notes
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AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
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AN1955: Thermal Measurement Methodology of RF Power Amplifiers
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AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
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AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
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EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
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Electromigration MTTF Calculator
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.s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the
Software & Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2009
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Initial Release of Data Sheet
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MRFE6S9045GNR1
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 45W TO270-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9045N
制造商:Freescale Semiconductor 功能描述:
MRFE6S9045NR1
功能描述:射频MOSFET电源晶体管 HV6E 45W NI270-2 FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9045NR1-CUT TAPE
制造商:Freescale 功能描述:MRFE6S9045 Series 880 MHz 10 W 28 V N-Channel RF Power MOSFET
MRFE6S9046GNR1
功能描述:射频MOSFET电源晶体管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9046NR1
功能描述:射频MOSFET电源晶体管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9060GNR1
功能描述:射频MOSFET电源晶体管 HV6E 60W TO 270-2GN FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9060NR1
功能描述:射频MOSFET电源晶体管 HV6E 60W TO270-2N FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray